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 QRD1113/1114
REFLECTIVE OBJECT SENSOR
PACKAGE DIMENSIONS
0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR
FEATURES
* Phototransistor Output * No contact surface sensing * Unfocused for sensing diffused surfaces * Compact Package * Daylight filter on sensor
0.173 (4.39)
0.183 (4.65)
NOTES
0.500 (12.7) MIN
(Applies to Max Ratings and Characteristics Tables.)
0.020 (0.51) SQ. (4X)
2 3
0.100 (2.54)
1 4
1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. As long as leads are not under any spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Cross talk (ICX) is the collector current measured with the indicator current on the input diode and with no reflective surface. 8. Measured using an Eastman Kodak neutral white test card with 90% diffused reflecting as a reflective surface.
0.083 (2.11)
PIN 1 COLLECTOR PIN 2 EMITTER
PIN 3 ANODE PIN 4 CATHODE
SCHEMATIC
2 3
NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface.
1
4
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Lead Temperature (Solder Iron)(2,3) Lead Temperature (Solder Flow)(2,3) EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1) SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1)
(TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD 100 Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 Units C C C C mA V mW V V mW
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QRD1113/1114
REFLECTIVE OBJECT SENSOR
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA = 25C)
SYMBOL MIN TYP MAX UNITS
EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Collector-Emitter Breakdown Emitter-Collector Breakdown Dark Current COUPLED QRD1113 Collector Current QRD1114 Collector Current Collector Emitter Saturation Voltage Cross Talk Rise Time Fall Time
IF = 20 mA VR = 5 V IF = 20 mA IC = 1 mA IE = 0.1 mA VCE = 10 V, IF = 0 mA IF = 20 mA, VCE = 5 V D = .050"
(6,8)
VF IR !PE BVCEO BVECO ID IC(ON)
-- -- -- 30 5 -- 0.300
-- -- 940 -- -- -- --
1.7 100 -- -- -- 100 --
V A nm V V nA mA
IF = 20 mA, VCE = 5 V D = .050"
(6,8)
IC(ON) VCE (SAT)
(7)
1 -- -- -- --
-- -- .200 10 50
-- 0.4 10 -- --
mA V A s s
IF = 40 mA, IC = 100 A D = .050"
(6,8)
IF = 20 mA, VCE = 5 V, EE = 0 VCE = 5 V, RL = 100 " IC(ON) = 5 mA
ICX tr tf
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REFLECTIVE OBJECT SENSOR
TYPICAL PERFORMANCE CURVES
Fig. 1 Forward Voltage vs. Forward Current
1.60 1.40
Fig. 2 Normalized Collector Current vs. Forward Current
10.0
Fig. 3 Normalized Collector Current vs. Temperature
1.0
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
VF - FORWARD VOLTAGE (mA)
1.20 1.00 0.20 0.60
1.00
0.8
0.6
0.10
0.4
0.01 VCE = 5 V D = .05" .001
0.2
0.40 0.20 0.1 1.0 10 100
IF = 10 mA VCE = 5 V
0 0 10 20 30 40 50 -50 -25 0 25 50 75
IF - FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (C)
Fig. 4 Normalized Collector Dark Current vs. Temperature
102 VCE = 10 V
Fig. 5 Normalized Collector Current vs. Distance
NORMALIZED - COLLECTOR CURRENT (mA)
ID - COLLECTOR DARK CURRENT
101
1.0 .9 .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 IF = 20 mA VCE = 5 V
10
1.0
10-1
10-2
10-3 -50 -25 0 25 50 75 100
TA - AMBIENT TEMPERATURE (C)
REFLECTIVE SURFACE DISTANCE (mils)
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REFLECTIVE OBJECT SENSOR
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
(c) 2000 Fairchild Semiconductor Corporation
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